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Hologram Unit
HUL7001
Hologram Unit
For optical information processing
4.80.1 0.8x5=4.00.2
Index mark for No.1 pin on reverse side 11.20.2 8.20.2 o8.0 +0 -0.05 1 2 3 4 5 6 (0.2) (0.5)
2.550.2 0.25 Lead frame 3.00.2
Unit : mm
Features
Smaller package size achieved through micro-mirror integration (4.8 x 8.2 x 4.3 mm) Focus error signal detection : SSD method Tracking error signal detection : 3-beam method Low-power semiconductor laser included
(0.3)
O Y Reference plane
Reference plane Apparent emitting point Apparent emitting point Reference plane
Applications
CD
SEC. X-O-Y (Note): 1.Standard corner R=0.20 max. 2.Thickness of plate:Ni 1m min.+Au 0.1m min. 3.Thickness of hologram=2.0mm, n=1.519
Absolute Maximum Ratings (Ta = 25C)
Parameter Laser beam output Laser reverse voltage Monitor PD reverse voltage Signal processing PD reverse voltage Operating ambient temperature Storage temperature Symbol PO VR(LD) VR(mon) VR Topr Tstg Ratings 0.3 2 12 12 - 10 to +60 - 40 to +85 Unit mW V V V C C
Unit Characteristic Specifications (Tc = 25 3C)
Parameter Threshold current Operating current Operating voltage Laser beam output Focus error signal amplitude Tracking error signal amplitude Focus error signal defocusing Tracking error signal symmetry Focus error signal pull-in range
*1 Measurements
Symbol Ith*1 IOP PO
*1,2
Conditions CW CW IRF = 10A, VR = 5V CW IRF = 10A, VR = 5V IRF = 10A, VR = 5V IRF = 10A, VR = 5V IRF = 10A, VR = 5V IRF = 10A, VR = 5V IRF = 10A, VR = 5V IRF = 10A, VR = 5V
,,,, , ,, , ,,,, ,,
8.10.2
min 20 25
0.50 0.780.2 1.330.2
typ 30 35 1.9 0.15
VOP*1,2
*1,2
IFE*1,3 ITE
*1,4
7 0.8 -8 - 30
10 1.3
DFO*1,5 BTE*1,4 DFE*1,3
12
are made using the reference optical system during measurement and the radiant power measurement system on the hologram unit shown in Fig. 2. *2 It should be noted that the RF signal amplitude in these specifications is denoted by I , and represents the amplitude of the 11T RF signal. As in the case described in *1, IRF is measured using the measurement system shown in Fig. 2. *3 The definition is illustrated in Fig. 3. *4 The definition is illustrated in Fig. 4. *5 The definition is illustrated in Fig. 5.
,,,, ,,,
SEC. X-O-Y
12 11 10 X 9 8 7
(0.35)
4.330.2 2.550.2
4.70.1
max 40 45 2.4 0.22 13 1.8 +8 + 30
Unit mA mA V mW A A % % m
1
HUL7001
Hologram Unit
Characteristic Specifications for Semiconductor Laser, Monitor PD, and Signaling Processing PD (Tc = 253C)
Parameter Semiconductor laser Oscillating wavelength Coherence Monitor current Dark current Capacitance between pinss Shield frequency
*6 Measurements
Symbol L*6 *6 IP(mon)*7 ID ID(mon)*8 Ct(RF1)*9 Ct(RF2)*9 fC
Conditions CW IRF = 10A, VR = 5V CW IRF = 10A, VR = 5V CW IRF = 10A, VR = 5V VR = 2.5V VR = 5V VR = 2.5V, f = 1MHz VR = 2.5V, RL = 50
min 775
typ 790 0.5
max 805 0.9 1.2 3.0 30
Unit nm
Monitor PD and signal processing PD 0.3 0.7 0.2 0.3 2 3 40 mA nA nA pF pF MHz
are made using the radiant power measurement system on the hologram unit. The definition is presented in Fig. 2. *7 Unless otherwise indicated, the values shown are per individual element. *8 The subscript (mon) denotes the element (monitor PD). *9 C t(RF1) denotes the capacitance measured at pin No. 4 or 10 in the electrode connection diagram. Ct(RF2) denotes the capacitance measured at pin No. 5 or 9 in the electrode connection diagram.
Connection Diagram (Fig. 1)
(a) Pin arrangement Gritty face Represents No.1 pin carved seal on reverse side
Pin Description
Pin No. 1 2 3
12 11 10 9 8 7
TOP VIEW
Function Source voltage Applications pin Monitor current output pin Tracking error signal output pin RF and focus error signal output pin RF and focus error signal output pin Source voltage Applications pin Source voltage Applications pin Tracking error signal output pin RF and focus error signal output pin RF and focus error signal output pin LD + Power supply pin GND pin
Calculation IP (mon) I1 + I6 I3 I2 + I4
Pin No.
1 2 3 4 5 6
4 5 6 7 8 9 10
(b) Chip structure
Pmon P1 P2 P3 P4 P5
LD
P6 P7 P8 P9 P10
LD Pmon
: Semiconductor laser chip : Monitor light detecting element P1 ~ P10 : Signal-detection lightdetecting-elements
I5 + I10 I7 + I9 I8
PD output current In : Output current when light is received by light detecting element N (n : 1 to 10, N = P1 to P10 ) Monitor PD output current IP (mon) : Output current when light is received by Pmon element Focus error signal FE = (I2+I4+I8) - (I3+I7+I9) Disk-close FE > 0 Disk-far FE < 0 TE = (I1+I6) - (I5+I10) The leading beam is the beam received by light detecting elements P1 and P6. RF = I2+I3+I4+I7+I8+I9
11 12
Electrode Connection Diagram
1,6,7 (VR) P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 Pmon LD 11 LD+
Tracking error signal
RF signal
3
4
5
8
9 10
2
12 GND
2
Hologram Unit
HUL7001
Optical Block Diagram During Measurement (Fig. 2)
(a) Radiant power measurement system of hologram unit (HUL7001)
Hologram unit (HUL7001) Optical axis Light detecting element (o10mm) or laser light input element of coherence measurement system
(b) Reference optical system during measurement
Apparent light emitting point 25.3mm
Actuator
19.0mm PKG reference surface o3.1mm aperture Collimator lens f = 25.3mm NA = 0.105 Objective lens f = 4.5mm NA = 0.45
Disk : A disk satisfying CD specifications is used.
(Note) The aperture and the light detecting element are positioned perpendicular to the axis of the light emitted from the hologram unit; the optical axis is positioned so as to pass through the center of the aperture.
The RF signal, focus error signal, and tracking error signal are measured using the above reference optical system and the equations shown in Fig. 1.
Focus Error Signal Amplitude and Pull-in Range (Fig. 3)
Tracking Error Signal Amplitude and Pull-in Range (Fig. 4)
Tracking error signal strength
Focus error signal
+ B 0 A Time
A : Tracking signal amplitude B : Difference between tracking signal amplitude center and electrical center
IFE
Objective lens movement Signal amplitude center ground level -
DFE IFE : Focus error signal amplitude DFE : Focus error signal pull-in range
Tracking error signal amplitude ITE = A Tracking error signal symmetry BTE = B x100 (%) A
Focus Error Signal Defocusing (Fig. 5)
High Jitter (ns)
DJ : Objective lens movement from position where focus error signal is 0 to jittering-best position. S(DJ ) : Amount of focus error signal at DJ
Low + Focus error signal
IFE : Focus error signal amplitude
Moving away from disk S(DJ) Approaching disk IFE 0 DJ - In the diagram, point 0 is the point at which the focus error signal equals 0. Objective lens movement (A)
Focus error signal S defocusing DFO = (DJ) x100 (%) IEF (Definition of focus error signal defocusing) Amount of focus error signal at jitter-best position as a percentage of focus error signal amplitude (%)
3
HUL7001
Hologram Unit
Important LDHU Usage Information
Panasonic's laser detector hologram unit (LDHU) has features of using a plastic package, and of integrating a low-current-operating, high-efficiency laser and a photodetector in order to reduce the size and weight of the optical pickup. Please follow the instructions presented below to take advantage of this feature and ensure that the pickup is highly reliable. 1. Static Electricity The semiconductor laser used in the LDHU is characteristically, especially sensitive to static electricity, in semiconductor devices. Therefore care must be taken in handling the semiconductor laser. If the laser receives a pulse which causes light to be emitted in excess of the maximum rating of the laser, the laser itself could be damaged by the optical energy. Therefore it is very important to take measures to protect the LDHU from static electricity and surges when putting together assembly lines or when handling it during manufacturing processes. (1) Check all drive circuitry, including the power supply. Take sufficient preventive measures to ensure that, for example, spike currents generated when the power switch is turned on or off never exceed the absolute maximum ratings of the LDHU. Also insert appropriate protective circuits in the LDHU drive circuitry. (2) Be careful not to allow static electricity to destroy the LDHU while handling it. Effective measures for protecting against static electricity include body grounds (passing through 1M), as well as conductive mats for the floor, conductive clothing, conductive shoes, and conductive containers. The tips of soldering irons must be grounded. We recommend using ionizers, etc., especially around facilities and areas where static electricity is easily generated. (3) The laser may also be destroyed by abnormal pulses from nearby equipment. Therefore fluorescent lights and measuring equipments should not be turned on or off near the laser.
2. LDHU Heat-Release Design The semiconductor laser, which is the light emitting device, naturally has a limited service life. This service life is shortened as the temperature is increased. Therefore the design should include suitable heat-releasing measures. Heat release from the lead frame and the back of the package must be incorporated into the design in order to improve heatreleasing capabilities. For assistance in evaluating heat-releasing capabilities (thermal resistance), please contact us. 3. Storing LDHU Units After Removal from Aluminum-Laminated Bags If supplies are stored prior to mounting for extended periods of time in a high-humidity environment, subsequent heating during solder mounting will cause moisture in the parts to vaporize. This may cause problems related to part characteristics. In order to prevent moisture absorption, LDHU units are packaged in moistureproof aluminum-laminated bags which are sealed together with silica gel before shipping. After LDHU units are removed from these moistureproof bags, the mounting process should be completed quickly. Unused LDHU units which have been unsealed and require extended storage should be put back in their aluminum-laminated bags (along with the silicagel) and resealed. The recommended environment for LDHU mounting is a temperature range of 5C to 35C and a relative humidity range of 45% to75%. (To prevent excessive humidity and because static electricity occurs more easily if the humidity is too low.)
4
Hologram Unit
HUL7001
4. Important Information Regarding Soldering Special plastics are used in the LDHU package and hologram. Therefore only the leads (pins) should be heated (during soldering iron, dip, etc.), and soldering time should be short. Total heating methods such as reflow soldering should be avoided. (This device is gold-plated to ensure good solder adhesion, so a short soldering time is sufficient.) It is also recommended that a heat sink or other means be used to improve the package's heat-releasing effects in order to prevent the package from becoming hot as a result of heat transfer and radiation even when the leads are heated. Soldering location
6. Mechanical stress (1) Pressure on the package The LDHU package is made thin in order to reduce its size. Therefore, pressure on the package resulting of heat release, etc. may cause problems such as a change in the package shape or changes to its characteristics. In the point pressure application, force should be limited to 1kgf (9.8N) or less, but please design so that the area pressure application can be adopted as much as possible. (2) Lead formation and cutting In cases where lead formation and cutting are required, these actions must be performed at normal temperatures prior to soldering. Machining steps performed at high temperatures immediately after soldering, or after the solder has hardened should be avoided. In addition, steps should be taken to ensure that excessive mechanical stress is not applied during lead formation and cutting. Special care should be taken to avoid stress on the lead bases of the package, as this may create problems such as chipping the resin. 7. Other issues (1) The surface of the hologram is very important for light emission and light detecting. Therefore care should be taken to ensure that there are no fingerprints on the surface, residual flux after soldering, or adhering dust. (2) Viewing the laser beam with the naked eye is extremely dangerous and may result in blindness. Do not look directly at the laser while it is operating. (3) The products listed in this document are intended for use in standard applications, i.e., general electronic devices (such as office equipment, measuring equipment, and consumer electronics products). Customers considering applications involving special quality and reliability requirements and carrying a risk of loss of human life or bodily damage in the event of an accident or malfunction, or specific applications (such as aerospace applications, transportation equipment, combustion equipment, and safety devices), and customers considering applications other than the standard applications intended by us should contact our sales office before using these products.
,, ,,, ,
A A
A : Make sure there is a gap of at least 1mm.
Soldering temperature and time Temperature : 260C maximum Time : 5 seconds maximum 5. Flux cleaning method Alcohol is recommended as a solvent for flux cleaning. Chlorine base solvents in particular are a cause of lead corrosion and device deterioration. Petroleum base solvents should be avoided since they deteriorate the adhesive between the hologram and package. In addition, ultrasonic cleaning should be avoided since the device is hollow. Care should be taken in brushing the hologram surface, as this may scratch the back side.
5
Caution for Safety
I Gallium arsenide material (GaAs) is used in this product.
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
DANGER
I Do not touch or look at a laser beam directly.
It is in danger of a injury to eyesight or outer skin in the worst case.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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